HPSP-16 Conference

High Pressure in Semiconductor Physics

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Invited Speakers

Ana Akrap, University of Geneva, Switzerland:
“Electronic structure of topological insulators under high pressure by means of FTIR spectroscopy in DAC”

Niels Christensen, Aarhus University, Denmark:
“Indium-Gallium Nitride Alloys and Superlattices: Composition and Pressure Dependences

Yasufumi Fujiwara, Osaka University, Japan:
"Strain dependent energy transfer from the GaN host to Eu ions in Eu-doped GaN grown on different substrates by organometallic vapor phase epitaxy"

Alejandro Goñi, Institut de Ciència de Materials de Barcelona, Spain:
"Using high pressure to unravel the nature of optical transitions in (In,Ga)As/GaP quantum dots"

Marek Grinberg, University of Gdansk, Poland:
"High pressure study of the Ln3+ and Ln2+ ions in solids"

Yann Le Godec, Institut de minéralogie, de physique des matériaux et de cosmochimie, France:
"High pressure synthesis of new superhard boron compounds"

Bingbing Liu, Jilin University, China:
"Fullerene under high pressure"

Aldo Romero, West Virginia University, USA /Cinvestav, Mexico:
"Large magnetic canting in perovskite fluorides under pressure from first principles: physics and beyond"


HPSP - 16 August 6 - 8, 2014, Mexico City hpsp16@fis.cinvestav.mx